STUDYING THE GROWTH MECHANISMS OF Si EPITAXIAL LAYERS FROM A LIMITED VOLUME OF Si-Sn SOLUTION USING THEORETICAL CALCULATIONS AND THE SEDIMENTATION METHOD

Abstract

Differences in the thicknesses of the layers formed during the growth of solid solution epitaxial layers such as Si_1-xGe_x, (Si₂)_1-x(GaP)_x, (Ge₂)_1-x(GaAs)_x and (Ge₂)_1-x(ZnSe)_x on horizontally placed top and bottom substrates from a confined volume of liquid solution based on programming cooling were determined. In order to study the cause of this situation, silicon crystal layers were grown from a limited amount of solution (Si+Sn) on horizontally placed Si substrates in the temperature range of 973-1323 K, and in this process, a thicker crystal layer was grown on the upper substrate. The quality of the crystal layer grown on the top substrate is relatively low. We have shown that the reason for this phenomenon is that large-sized silicon nanoparticles in the solution system settle on a high substrate due to their low density during crystallization. It was considered that these processes occur due to the formation of a large number of large-sized silicon nanoparticles at high temperatures. The placement of large-sized nanoparticles on the substrate located above causes some defects in the formation of single crystals in this part. Experiments have shown that when the distance between the upper and lower Si substrates is less than 1.2 mm, crystal layers of the same thickness can be obtained from the solution on both substrates.

Keywords: Silicon, molecule, nanoparticle, sedimentation.