Razzokov , Alijon, Khushnudbek Eshchanov, and Amin Saidov. “STUDYING THE GROWTH MECHANISMS OF Si EPITAXIAL LAYERS FROM A LIMITED VOLUME OF Si-Sn SOLUTION USING THEORETICAL CALCULATIONS AND THE SEDIMENTATION METHOD”. International Journal of Mathematics and Physics 16, no. 1 (June 19, 2025): 47–52. Accessed July 15, 2025. https://ijmph.kaznu.kz/index.php/kaznu/article/view/742.