KOMAROV, F.; VLASUKOVA, L.; MAKHAVIKOU, M.; WENDLER, E.; TOGAMBAYEVA, A. Formation of ZnSe nanoclusters in the layers of silicon dioxide by high-fluence ion implantation and annealing. International Journal of Mathematics and Physics, [S. l.], v. 8, n. 1, p. 19–23, 2017. DOI: 10.26577/ijmph.2017.v8.i1.03. Disponível em: https://ijmph.kaznu.kz/index.php/kaznu/article/view/218. Acesso em: 19 may. 2024.