RAZZOKOV , A.; ESHCHANOV, K.; SAIDOV, A. STUDYING THE GROWTH MECHANISMS OF Si EPITAXIAL LAYERS FROM A LIMITED VOLUME OF Si-Sn SOLUTION USING THEORETICAL CALCULATIONS AND THE SEDIMENTATION METHOD. International Journal of Mathematics and Physics, [S. l.], v. 16, n. 1, p. 47–52, 2025. DOI: 10.26577/ijmph.20251615. Disponível em: https://ijmph.kaznu.kz/index.php/kaznu/article/view/742. Acesso em: 15 jul. 2025.